LH28F320SKTD-ZR Sharp Microelectronics, LH28F320SKTD-ZR Datasheet - Page 55

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LH28F320SKTD-ZR

Manufacturer Part Number
LH28F320SKTD-ZR
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH28F320SKTD-ZR

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-2463
LHF32KZR
NOTES:
1. Typical values measured at T
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV1
EHQV1
WHQV1
EHQV1
WHQV2
EHQV2
WHQV3
EHQV3
WHQV4
EHQV4
WHRZ1
EHRZ1
WHRZ2
EHRZ2
Sym.
set. Subject to change based on device characterization.
Word/Byte Write Time
(using W/B write, in word mode)
Word/Byte Write Time
(using W/B write, in byte mode)
Word/Byte Write Time
(using multi word/byte write)
Block Write Time
(using W/B write, in word mode)
Block Write Time
(using W/B write, in byte mode)
Block Write Time
(using multi word/byte write)
Block Erase Time
Bank Erase Time
Set Block Lock-Bit Time
Clear Block Lock-Bits Time
Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
A
=+25°C and nominal voltages. Assumes corresponding block lock-bits are not
Parameter
V
CC
=5V±0.5V, 5V±0.25V, T
LHF32KZR
A
=0°C to +70°C
Notes
2
2
2
2
2
2
2
2
2
Typ.
9.24
9.24
0.31
0.61
0.13
0.34
10.9
9.24
0.34
5.6
9.4
V
2
PP
(1)
=4.5V-5.5V
Max.
13.1
120
120
120
320
120
3.7
7.5
1.5
10
10
7
Unit
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s
52

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