LH28F320SKTD-ZR Sharp Microelectronics, LH28F320SKTD-ZR Datasheet - Page 40
![no-image](/images/manufacturer_photos/0/6/603/sharp_microelectronics_sml.jpg)
LH28F320SKTD-ZR
Manufacturer Part Number
LH28F320SKTD-ZR
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Sharp Microelectronics
Datasheet
1.LH28F320SKTD-ZR.pdf
(70 pages)
Specifications of LH28F320SKTD-ZR
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-2463
LHF32KZR
LHF32KZR
6.2.3 DC CHARACTERISTICS
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
Sym.
LI
LO
CCS
CCD
CCR
CCW
CCE
CCWS
CCES
PPS
PPR
PPD
PPW
PPE
PPWS
PPES
Following is the current consumption of one bank.
For the current consumption of one device total, please refer to the Note 8.
Input Load Current
Output Leakage
Current
V
V
Down Current
V
V
((Multi) W/B Write or
Set Block Lock Bit)
V
(Block Erase, Bank
Erase, Clear Block
Lock Bits)
V
Erase Suspend Current
V
V
V
Current
V
((Multi) W/B Write or
Set Block Lock Bit)
V
(Block Erase, Bank
Erase, Clear Block
Lock Bits)
V
Erase Suspend Current
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
PP
Standby Current
Read Current
Deep Power-Down
Write Current
Erase Current
Write or Block
Standby Current
Deep Power-
Read Current
Write Current
Erase Current
Write or Block
Parameter
1,3,6,8
1,5,6,8
Notes Typ.
1,7,8
1,7,8
1,2,8
1,7,8
1,7,8
1,8
1
1
1
1
1
1
0.1
V
±2
20
10
10
1
1
CC
=2.7V
DC Characteristics
Max.
±0.5
±0.5
100
±15
200
200
15
25
30
17
17
17
17
17
17
80
80
80
40
40
40
LHF32KZR
4
6
5
Typ.
0.1
V
20
±2
10
10
⎯
⎯
⎯
⎯
1
1
CC
=3.3V
Max.
±0.5
±0.5
100
±15
200
200
15
25
30
17
17
17
17
80
80
40
40
⎯
⎯
⎯
⎯
4
6
5
Typ.
0.1
25
±2
10
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
1
V
CC
=5V
Max. Unit
±10
100
±15
200
200
±1
15
50
65
⎯
⎯
35
⎯
⎯
30
10
⎯
⎯
80
⎯
⎯
40
4
5
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
CMOS Inputs
V
BE#=RP#=V
TTL Inputs
V
BE#=RP#=V
RP#=GND±0.2V
I
CMOS Inputs
V
BE#=GND
f=5MHz(3.3V, 2.7V),
I
TTL Inputs
V
BE#=V
f=5MHz(3.3V, 2.7V),
I
V
V
V
V
V
V
BE#=V
V
V
RP#=GND±0.2V
V
V
V
V
V
V
V
OUT
OUT
OUT
CC
IN
CC
OUT
CC
CC
CC
CC
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
8MHz(5V)
8MHz(5V)
=V
=2.7V-3.6V
=3.3V±0.3V
=5.0V±0.5V
=2.7V-3.6V
=3.3V±0.3V
=5.0V±0.5V
≤V
>V
=2.7V-3.6V
=3.3V±0.3V
=5.0V±0.5V
=2.7V-3.6V
=3.3V±0.3V
=5.0V±0.5V
=V
=V
=V
=V
=V
=V
=V
(STS)=0mA
=0mA
=0mA
=V
Conditions
CC
CC
CC
PPH1/2/3
CC
CC
CC
CC
CC
CC
IL
IH
CC
Test
or GND
Max.
Max.
Max.
Max.
Max.
Max.
or GND
CC
IH
±0.2V
37