LH28F320SKTD-ZR Sharp Microelectronics, LH28F320SKTD-ZR Datasheet - Page 52
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LH28F320SKTD-ZR
Manufacturer Part Number
LH28F320SKTD-ZR
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Sharp Microelectronics
Datasheet
1.LH28F320SKTD-ZR.pdf
(70 pages)
Specifications of LH28F320SKTD-ZR
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-2463
LHF32KZR
LHF32KZR
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6.2.7 RESET OPERATIONS
NOTES:
1. If RP# is asserted while a block erase, bank erase, (multi) word/byte write or block lock-bit configuration
2. A reset time, t
3. When the device power-up, holding RP# low minimum 100ns is required after V
Symbol
t
t
t
PLPH
PLRZ
235VPH
operation is not executing, the reset will complete within 100ns.
and also has been in stable there.
RP# Pulse Low Time
(If RP# is tied to V
specification is not applicable)
RP# Low to Reset during
Block Erase, Bank Erase,
(Multi) Word/Byte Write or
Block Lock-Bit Configuration
V
V
V
CC
CC
CC
at 2.7V to RP# High
at 3.0V to RP# High
at 4.5V to RP# High
PHQV
STS(R)
STS(R)
RP#(P)
RP#(P)
RP#(P)
V
Parameter
CC
, is required from the latter of STS going High Z or RP# going high until outputs are valid.
High Z
High Z
2.7/3.3/5V
V
V
V
V
V
V
V
V
V
OL
OL
IH
IL
IH
IL
IL
IH
IL
CC
, this
Figure 22. AC Waveform for Reset Operation
(B)Reset During Block Erase, Bank Erase, (Multi) Word/Byte Write
t
t
Notes
PLPH
PLPH
or Block Lock-Bit Configuretion
1,2
Reset AC Specifications
3
(A)Reset During Read Array Mode
LHF32KZR
Min.
100
100
(C)V
t
t
235VPH
PLRZ
V
CC
CC
=2.7V
Power Up Timing
Max.
21.5
Min.
100
100
V
CC
=3.3V
Max.
21.1
CC
has been in predefined range
Min.
100
100
V
CC
=5V
Max.
13.1
Unit
ns
µs
ns
49
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