LH28F320SKTD-ZR Sharp Microelectronics, LH28F320SKTD-ZR Datasheet - Page 47

• Manufacturer Part Number: LH28F320SKTD-ZR
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F320SKTD-ZR

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2463; LHF32KZR

NOTES:
1. Read timing characteristics during block erase, bank erase, (multi) wrod/byte write and block lock-bit
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVSL
Sym.
configuration operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
configuration.
lock-bit configuration success (SR.1/3/4/5=0).
Configuration) for testing characteristics.
Configuration) for testing characteristics.
PP
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going
Low
BE# Setup to WE# Going Low
WE# Pulse Width
WP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
BE# Hold from WE# High
WE# Pulse Width High
WE# High to STS Going Low
Write Recovery before Read
V
WP# V
High Z
PP
PP
Setup to WE# Going High
Hold from Valid SRD, STS High Z
Versions
IH
IH
Setup to WE# Going High
Hold from Valid SRD, STS
Parameter
PPH1/2/3
IN
and D
until determination of block erase, bank erase, (multi) word/byte write or block
V
CC
IN
=5V±0.5V, 5V±0.25V, T
for block erase, bank erase, (multi) word/byte write or block lock-bit
LHF32KZR
Notes
2,4
2,4
2
2
2
3
3
V
Min.
A
100
100
CC
70
10
40
40
40
10
30
=0°C to +70°C
1
5
5
0
0
0
=5V±0.25V
Max.
90
(5)
V
Min.
100
100
80
10
40
40
40
10
30
CC
1
5
5
0
0
0
=5V±0.5V
Max.
90
(6)
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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