LH28F008SCT-L85 Sharp Microelectronics, LH28F008SCT-L85 Datasheet - Page 5

• Manufacturer Part Number: LH28F008SCT-L85
• Description: IC FLASH 8MBIT 85NS 40TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F008SCT-L85

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 40-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 425-1835; F008SCTL85; LHF08CH1

sharp
■ SmartVoltage Technology
■ High-Performance Read Access Time
■ Operating Temperature
■ High-Density Symmetrically-Blocked
■ Low Power Management
■ Enhanced Data Protection Features
SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile,
read/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage
and extended cycling provide for highly flexible component suitable for resident flash arrays, SIMMs and memory
cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For
secure code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the LH28F008SCT-L85 offers three levels of protection: absolute protection with V
GND, selective hardware block locking, or flexible software block locking. These alternatives give designers
ultimate control of their code security needs.
The LH28F008SCT-L85 is manufactured on SHARP’s 0.38µm ETOX
industry-standard package: the 40-lead TSOP, ideal for board constrained applications. Based on the 28F008SA
architecture, the LH28F008SCT-L85 enables quick and easy upgrades for designs demanding the state-of-the-art.
*ETOX is a trademark of Intel Corporation.
Architecture
2.7V(Read-Only), 3.3V or 5V V
3.3V, 5V or 12V V
85ns(5V±0.25V), 90ns(5V±0.5V),
120ns(3.3V±0.3V), 150ns(2.7V-3.6V)
0°C to +70°C
Sixteen 64K-byte Erasable Blocks
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
Absolute Protection with V
Flexible Block Locking
Block Erase/Byte Write Lockout
during Power Transitions
CC
in Static Mode
SmartVoltage Flash MEMORY
PP
LH28F008SCT-L85
8M-BIT (1MB x 8)
PP
=GND
CC
LHF08CH1
■ Automated Byte Write and Block Erase
■ Enhanced Automated Suspend Options
■ Extended Cycling Capability
■ SRAM-Compatible Write Interface
■ Industry-Standard Packaging
■ ETOX
■ CMOS Process
■ Not designed or rated as radiation
(P-type silicon substrate)
hardened
Command User Interface
Status Register
Byte Write Suspend to Read
Block Erase Suspend to Byte Write
Block Erase Suspend to Read
100,000 Block Erase Cycles
1.6 Million Block Erase Cycles/Chip
40-Lead TSOP
TM*
Nonvolatile Flash Technology
TM
process technology. It come in
Rev. 1.3
PP
at
2