MT48H4M16LFB4-8 IT Micron Technology Inc, MT48H4M16LFB4-8 IT Datasheet - Page 50

• Manufacturer Part Number: MT48H4M16LFB4-8 IT
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
SYMBOL
1. For this example, the burst length = 1, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. A9 and A11 = “Don’t Care.”
4. WRITE command not allowed else
1. CAS latency indicated in parentheses.
DQMU, DQML
t
t
t
t
COMMAND
AC (3)
AC (2)
A0-A9, A11
CK (3)
CK (2)
t
t
t
t
CKH
t
CKS
t
BA0, BA1
AH
CH
AS
CL
CLK
CKE
A10
DQ
1
t CMS
t CKS
t AS
t AS
t AS
MIN
2.5
9.6
2.5
ACTIVE
T0
ROW
ROW
BANK
1
3
3
8
1
t CMH
t CKH
t AH
t AH
t AH
-8
t RCD
t RAS
t RC
MAX
100
100
7
8
t CK
T1
NOP 3
Figure 46: Single WRITE – With Auto Precharge
MIN
2.5
9.6
2.5
12
1
3
3
1
IN
-10
t CL
m> and the PRECHARGE command, regardless of frequency.
MAX
NOP 3
T2
100
100
7
8
t CH
t
RAS would be violated.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOP 3
T3
ENABLE AUTO PRECHARGE
t CMS
t DS
COLUMN m 2
BANK
WRITE
T4
D
IN
t CMH
t DH
m
50
t WR
SYMBOL
t
t
WR (m)
WR (a)
t
t
t
t
CMH
CMS
t
RCD
t
RAS
t
t
DH
DS
RC
RP
T5
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1 CLK
MIN
+7ns
2.5
2.5
NOP
T6
48
80
19
19
15
1
1
-8
t RP
120,000
MAX
T7
NOP
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
1
1 CLK
MIN
+5ns
100
ACTIVE
ROW
ROW
BANK
2.5
2.5
50
20
20
15
T8
1
1
64Mb: x16
-10
DON’T CARE
120,000
MAX
T9
NOP
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
–