MT48H4M16LFB4-8 IT Micron Technology Inc, MT48H4M16LFB4-8 IT Datasheet - Page 40

• Manufacturer Part Number: MT48H4M16LFB4-8 IT
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. A9 and A11 = “Don’t Care.”
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
CKS
t
AH
CH
AS
CL
DQMU, DQML
1
COMMAND
A0-A9, A11
BA0, BA1
MIN
CKE
A10
CLK
2.5
9.6
2.5
DQ
1
3
3
8
1
t CMS
t CKS
-8
t AS
t AS
t AS
ACTIVE
ROW
ROW
BANK
MAX
T0
100
100
t CMH
t CKH
t AH
t AH
t AH
7
8
t RCD
t RAS
t RC
t CK
Figure 36: READ – Without Auto Precharge1
MIN
2.5
9.6
2.5
12
1
3
3
1
T1
NOP
-10
DISABLE AUTO PRECHARGE
MAX
100
100
t CMS
t CL
7
8
COLUMN m
BANK
T2
READ
t CMH
t CH
UNITS
CAS Latency
2
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
T3
NOP
t LZ
t AC
T4
D
40
NOP
OUT
t OH
t AC
m
SYMBOL
t
t
t
HZ (3)
HZ (2)
t
t
t
D
CMH
CMS
t
RCD
RAS
t
t
t
T5
OUT
OH
RC
RP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
LZ
NOP
t OH
m+1
t AC
SINGLE BANKS
ALL BANKS
PRECHARGE
BANK(S)
D
T6
OUT
MIN
2.5
2.5
48
80
19
19
t OH
1
1
m+2
t RP
t AC
-8
120,000
D
MAX
T7
NOP
OUT
7
8
t OH
m+3
t HZ
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
BANK
MIN
ACTIVE
ROW
ROW
T8
100
2.5
2.5
50
20
20
1
1
DON’T CARE
UNDEFINED
64Mb: x16
-10
120,000
MAX
7
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns