MT48H4M16LFB4-8 IT Micron Technology Inc, MT48H4M16LFB4-8 IT Datasheet - Page 39

IC SDRAM 64MBIT 125MHZ 54VFBGA

MT48H4M16LFB4-8 IT

Manufacturer Part Number
MT48H4M16LFB4-8 IT
Description
IC SDRAM 64MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H4M16LFB4-8 IT

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
64M (4M x 16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. Each AUTO REFRESH command performs a refresh cycle. Back-to-back commands are not required.
1. CAS latency indicated in parentheses.
SYMBOL
t
t
CK (3)
CK (2)
t
t
t
t
AH
CH
AS
CL
1
MIN
2.5
9.6
1
3
3
8
-8
DQMU, DQML
MAX
100
100
COMMAND
A0-A9, A11
BA0, BA1
CKE
A10
CLK
DQ
MIN
2.5
9.6
High-Z
12
Precharge all
t CKS
active banks
1
3
3
t CMS
t
SINGLE BANK
AS
PRECHARGE
ALL BANKS
BANK(S)
-10
T0
t CKH
t CMH
t
AH
MAX
t CK
100
100
Figure 35: Self Refresh Mode
t RP
T1
UNITS
NOP
t CH
ns
ns
ns
ns
ns
ns
Enter self refresh mode
t CKS
t CL
REFRESH
CLK stable prior to exiting
T2
AUTO
self refresh mode
> t RAS
(
(
(
(
(
(
)
(
)
(
)
)
(
)
(
)
(
)
)
)
)
)
(
(
(
(
(
(
)
(
)
(
(
)
)
(
(
)
)
)
(
)
(
)
(
)
)
)
)
)
39
(
(
(
)
)
)
SYMBOL
(Restart refresh time base)
t
t
t
t
Exit self refresh mode
t
CMH
t
CKH
CMS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CKS
RAS
t
XSR
RP
Tn + 1
NOP
t XSR
(
(
(
(
(
(
(
(
)
(
)
(
)
(
)
(
)
(
(
)
)
)
)
(
)
)
)
)
)
(
(
(
(
(
)
(
(
(
)
(
)
(
(
)
(
)
(
)
)
(
)
)
)
)
)
)
)
(
)
)
MIN
2.5
2.5
48
19
80
To + 1
1
1
-8
120,000
MAX
To + 2
REFRESH
AUTO
MOBILE SDRAM
DON’T CARE
©2003 Micron Technology, Inc. All rights reserved.
MIN
100
2.5
2.5
50
20
1
1
64Mb: x16
-10
120,000
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns

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