NDS9956A_Q Fairchild Semiconductor, NDS9956A_Q Datasheet - Page 6

• Manufacturer Part Number: NDS9956A_Q
• Description: MOSFET Dual N-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9956A_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 3.7 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 6 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 21 ns

Typical Thermal Characteristics
Figure 14. Maximum Safe Operating Area.
0.03
0.01
0.3
0.1
2.5
1.5
0.5
3 0
1 0
0 .0 0 5
0 .0 0 2
0 .0 0 1
3
1
2
1
0 .0 5
0 .0 2
0 .0 1
0.1
0 .5
0 .2
0 .1
0
0 .0001
Figure 12. SO-8 Dual Package Maximum
1c
1
1 b
R
SINGLE PULSE
J A
0.2
V
T
GS
= See Note 1c
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
A
= 25°C
0.2
2oz COPPER MOUNTING PAD AREA (in
= 10V
D = 0.5
0.5
V
DS
0.2
0.1
0.05
, DRAIN-SOURCE VOLTAGE (V)
0 .001
0.02
1
0.01
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
0.4
Single Pulse
Total Power for Dual Operation
2
depending on the circuit board design.
1a
0.6
5
0 .0 1
Power for Single Operation
4.5"x5" FR-4 Board
T
Still Air
1 0
A
= 2 5 C
0.8
2
o
)
3 0
5 0
t , TIME (sec)
0 .1
1
1
5
4
3
2
1
0
1c
Figure 13. Maximum Steady- State Drain
1 b
1
.
Current versus Copper Mounting Pad
Area.
0.1
2oz COPPER MOUNTING PAD AREA (in
P(pk)
T - T
Duty Cycle, D = t
1 0
R
0.2
J
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= See Note 1c
0.3
JA
1
/ t
JA
(t)
1 0 0
2
4.5"x5" FR-4 Board
T
Still Air
V
A
G S
= 2 5 C
= 1 0 V
2
0.4
o
)
3 0 0
NDS9956A.SAM
1a
0.5