NDS9956A_Q Fairchild Semiconductor, NDS9956A_Q Datasheet - Page 5

• Manufacturer Part Number: NDS9956A_Q
• Description: MOSFET Dual N-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9956A_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 3.7 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 6 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 21 ns

Typical Electrical Characteristics
Figure 11. Transconductance Variation with Drain
1.12
1.08
1.04
0.96
0.92
1 0
1 0 0 0
Figure 9. Capacitance Characteristics.
8
6
4
2
0
Figure 7. Breakdown Voltage Variation with
8 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1
-50
5 0
0
0.1
V
Current and Temperature.
DS
Temperature.
I
=10V
D
-25
0.2
= 250µA
f = 1 MHz
V
GS
2
T
= 0V
0
J
V
DS
, JUNCTION TEMPERATURE (°C)
0.5
, DRAIN TO SOURCE VOLTAGE (V)
I
D
25
, DRAIN CURRENT (A)
4
1
50
2
75
6
T = -55°C
J
5
100
25°C
125°C
8
1 0
125
C iss
C oss
C rss
150
1 0
3 0
0.001
0.01
Figure 10. Gate Charge Characteristics.
10
0.5
0.1
8
6
4
2
0
1 0
Figure 8. Body Diode Forward Voltage Variation
5
1
0
0.2
I
D
V
= 3.7A
with Current and Temperature
GS
T = 125°C
J
2
0.4
= 0V
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.6
Q
4
g
, GATE CHARGE (nC)
25°C
0.8
6
V
DS
= 10V
-55°C
1
8
.
1.2
10
20V
15V
NDS9956A.SAM
1.4
12