NDS9956A_Q Fairchild Semiconductor, NDS9956A_Q Datasheet - Page 4

• Manufacturer Part Number: NDS9956A_Q
• Description: MOSFET Dual N-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9956A_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 3.7 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 6 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 21 ns

Typical Electrical Characteristics
1 0
8
6
4
2
0
2 0
1 5
1 0
1.6
1.4
1.2
0.8
0.6
1
5
0
1
Figure 3. On-Resistance Variation with
0
-50
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
DS
Temperature.
V
= 10V
-25
I
D
G S
= 3.7A
V
= 10V
GS
V
2
GS
=10V
V
0
T , JUNCTION TEMPERATURE (°C)
DS
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
1
2 5
8.0
6.0
3
5 0
T = -55°C
J
5.0
7 5
2
4.5
100
4
4.0
125°C
3.5
25°C
125
3.0
150
5
3
1.2
1.1
0.9
0.8
0.7
0.6
1.5
0.5
2.5
1.5
0.5
1
2
1
Figure 4. On-Resistance Variation with Drain
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
-50
3
2
1
0
0
Current and Temperature.
Temperature.
Voltage and Drain Current.
V
-25
GS
= 10 V
3
3
0
T , JUNCTION TEMPERATURE (°C)
J
V
GS
I
I
= 3.5V
D
D
2 5
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
6
6
5 0
4.0
9
9
7 5
T = 125°C
J
4.5
1 0 0
I
V
D
DS
= 250µA
5.0
25°C
1 2
1 2
= V
-55°C
6.0
1 2 5
GS
NDS9956A.SAM
8.0
10
1 5 0
15
1 5