FDW2507N_Q Fairchild Semiconductor, FDW2507N_Q Datasheet - Page 6

• Manufacturer Part Number: FDW2507N_Q
• Description: MOSFET N-Channel 2.5V Common Drain
• Manufacturer: Fairchild Semiconductor

Specifications of FDW2507N_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 7.5 A
• Resistance Drain-source Rds (on): 19 mOhms
• Configuration: Dual Common Quad Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 31 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 35 ns

© 2006 Fairchild Semiconductor Corporation
FAN5631/FAN5632 Rev. 1.0.2
Typical Performance Characteristics
T
A
= 25°C, V
100
-0.5
-1.5
90
80
70
60
50
0.5
Efficiency and Output Voltage vs. Input Voltage
-1
-2
90
85
80
75
70
65
60
55
50
45
40
35
30
2.5
0
Figure 6. FAN5632 Efficiency Optimizer
0
I
2
2.7V
LOAD
Figure 4. Efficiency vs. Input Voltage
V
V
I
LOAD
= 100mA, V
SE L
OU T
OUT
20
= HIGH
= 1.5V
= 150m A
3
2.5
Figure 8. Load Regulation
= 1.5V, V
40
SEL
= LOW
3.5
3
Load Current (mA)
60
Input Voltage (V)
Input Voltage (V)
IN
= 3.6V, C
3.5
80
4
3.2V
100
4
4.5
IN
120
= 10µF, C
2.2V
4.5
5
140
5.5V
3.6V
5
160
OUT
5.5
1.5
1.4
1.3
1.2
= 10µF, C
180
5.5
6
B
= 1µF, unless otherwise noted.
90
85
80
75
70
65
60
55
50
45
40
1.60
1.55
1.50
1.45
1.40
1.54
1.53
1.52
1.51
1.50
1
-50
Figure 5. Efficiency vs. Load Current
V
I
V
LOAD
IN
V
IN
I
T
2.5
Load
Figure 9. Thermal Regulation
V
IN
= 3.6V
A
= 1mA
IN
= 3.3V
-25
= 85 °C
= 2.7V
Figure 7. Line Regulation
= 4.2V
= 50mA
3.0
0
Ambient Temperature (°C)
Load Current (mA)
Input Voltage( V )
25
3.5
T
A
= 25 °C
10
50
4.0
T
A
75
= -40 °C
4.5
100
V
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SEL
5.0
= HIGH
125
100
150
5.5