FGD3440G2_F085 Fairchild Semiconductor, FGD3440G2_F085 Datasheet - Page 6

• Manufacturer Part Number: FGD3440G2_F085
• Description: IGBT Transistors EcoSPARK2 335mJ 400V N-Chan Ignition IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGD3440G2_F085

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 400 V
• Collector-emitter Saturation Voltage: 1.1 V
• Maximum Gate Emitter Voltage: 14 V
• Continuous Collector Current At 25 C: 26.9 A
• Power Dissipation: 166 W
• Maximum Operating Temperature: + 125 C
• Package / Case: TO-252
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 2500

@2011 Fairchild Semiconductor Corporation
FGD3440G2_F085 Rev. B
Typical Performance Curves
Figure 13.
2000
1600
1200
800
400
440
420
400
380
0.01
0.1
0
10
2
1
10
-5
I
CER
DUTY CYCLE - DESCENDING ORDER
D = 0.50
Capacitance vs. Collector to Emitter
Figure 16.
V
DS
= 10mA
0.02
0.05
5
, DRAIN TO SOURCE VOLTAGE
0.01
SINGLE PULSE
0.2
0.1
C
RES
Voltage
Figure 15.
10
IGBT Normalized Transient Thermal Impedance, Junction to Case
C
OES
10
C
-4
IES
15
Break down Voltage vs. Series Gate Resistance
20
t, RECTANGULAR PULSE DURATION(s)
f = 1MHz
V
R
100
GE
(Continued)
G
(
V
, SERIES GATE RESISTANCE
= 0V
)
10
-3
25
6
10
8
6
4
2
0
T
0
J
= 25
I
CE
10
= 10A, T
o
-2
C
10
( Ω )
Figure 14.
J
T
Q
20
= 25
NOTES:
DUTY FACTOR: D = t
PEAK T
J
g
1000
= 175
, GATE CHARGE(nC)
o
V
C
CE
o
J
30
C
= P
Gate Charge
= 6V
DM
10
x Z
40
V
-1
θJC
CE
P
T
DM
1
J
/t
= 12V
x R
= -40
2
50
θJC
www.fairchildsemi.com
o
t
C
1
+ T
t
2
C
60
6000
70
1