FGD3440G2_F085 Fairchild Semiconductor, FGD3440G2_F085 Datasheet - Page 5

• Manufacturer Part Number: FGD3440G2_F085
• Description: IGBT Transistors EcoSPARK2 335mJ 400V N-Chan Ignition IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGD3440G2_F085

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 400 V
• Collector-emitter Saturation Voltage: 1.1 V
• Maximum Gate Emitter Voltage: 14 V
• Continuous Collector Current At 25 C: 26.9 A
• Power Dissipation: 166 W
• Maximum Operating Temperature: + 125 C
• Package / Case: TO-252
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 2500

@2011 Fairchild Semiconductor Corporation
FGD3440G2_F085 Rev. B
Typical Performance Curves
Figure 7.
10000
1000
Figure 11.
Figure 9.
30
20
10
100
30
20
10
0.1
0
10
0
25
1
0
-50
V
V
V
V
V
GE
GE
GE
V
GE
GE
CE
Collector to Emitter On-State Voltage
= 5.0V
= 4.5V
-25
= 8.0V
= 4.0V
= 3.7V
, COLLECTOR TO EMITTER VOLTAGE (V)
50
T
vs. Collector Current
DC Collector Current vs. Case
T
J
Leakage Current vs. Junction
, JUNCTION TEMPERATURE
C
0
, CASE TEMPERATURE
1
Temperature
Temperature
75
25
V
V
CES
ECS
50
100
= 300V
2
= 24V
V
CES
75
= 250V
125
100 125 150 175
(
o
C
3
V
)
(
150
T
GE
o
J
C
(Continued)
= 175
= 4.0V
)
o
C
175
4
5
Figure 10. Threshold Voltage vs. Junction
2.0
1.8
1.6
1.4
1.2
1.0
30
20
10
12
10
Figure 12.
0
8
6
4
2
0
-50
25
1
Figure 8.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
CE
CE
-25
T
= 6.5A, V
= 5V
J
V
= 25
GE
50
T
T
J
J
, GATE TO EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE
, JUNCTION TEMPERATURE
o
0
Switching Time vs. Junction
C
GE
Transfer Characteristics
Temperature
Temperature
= 5V, R
75
25
T
2
J
= 175
50
G
μ
o
= 1K
100
s
C
75
Ω
T
J
= -40
125
100 125 150 175
3
Resistive t
Inductive t
o
www.fairchildsemi.com
C
Resistive t
(
(
o
V
I
150
o
C
CE
C
CE
)
)
OFF
= 1m
OFF
=
V
ON
GE
A
175
4