FGD3440G2_F085 Fairchild Semiconductor, FGD3440G2_F085 Datasheet - Page 3

• Manufacturer Part Number: FGD3440G2_F085
• Description: IGBT Transistors EcoSPARK2 335mJ 400V N-Chan Ignition IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGD3440G2_F085

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 400 V
• Collector-emitter Saturation Voltage: 1.1 V
• Maximum Gate Emitter Voltage: 14 V
• Continuous Collector Current At 25 C: 26.9 A
• Power Dissipation: 166 W
• Maximum Operating Temperature: + 125 C
• Package / Case: TO-252
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 2500

@2011 Fairchild Semiconductor Corporation
FGD3440G2_F085 Rev. B
Electrical Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Notes:
1: Self Clamping Inductive Switching Energy(E
T
2: Self Clamping Inductive Switching Energy (E
T
Q
V
V
t
t
t
t
R
Symbol
d(ON)R
rR
d(OFF)L
fL
J
J
GE(TH)
GEP
θJC
G(ON)
=25
=150
o
C; L=3mHy, I
o
Thermal Resistance Junction to Case
C; L=3mHy, I
Gate Charge
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
Current Turn-On Delay Time-Resistive V
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive V
Current Fall Time-Inductive
SCIS
Parameter
SCIS
=15A,V
=11.4A,V
CC
=100V during inductor charging and V
CC
T
A
=100V during inductor charging and V
= 25°C unless otherwise noted
I
V
I
V
V
T
V
I
CE
CE
CE
GE
CE
CE
GE
J
CE
GE
SCIS25
SCIS150
= 25
= 10A, V
= 1mA, V
=6.5A, T
= 12V, I
= 14V, R
= 300V, L = 1mH,
= 5V
= 5V, R
= 5V, R
o
C,
) of 335mJ is based on the test conditions that is starting
) of 195mJ is based on the test conditions that is starting
3
CE
J
CE
G
G
CE
L
Test Conditions
= 25
= 1Ω
= 1KΩ
= 1KΩ
= 10A
= 12V,
= V
o
C,
GE,
T
T
J
J
= 150
= 25
CC
=0V during the time in clamp
o
CC
C
o
C
=0V during the time in clamp
0.75
1.3
Min
-
-
-
-
-
-
-
Typ
1.7
1.2
2.8
1.0
2.0
5.3
2.3
24
-
www.fairchildsemi.com
Max Units
0.9
2.2
1.8
15
15
4
7
-
-
o
C/W
nC
μs
μs
μs
μs
V
V
.
.