FGH30S130P Fairchild Semiconductor, FGH30S130P Datasheet - Page 6

• Manufacturer Part Number: FGH30S130P
• Description: IGBT Transistors 1300V 30A FS SA Trench IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30S130P

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1300 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 60 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-3PN
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C0
1E-3
0.01
0.1
1
1E-5
Figure 19. Transient Thermal Impedance of IGBT
single pulse
0.5
0.05
0.02
0.1
0.01
0.2
1E-4
Rectangular Pulse Duration [sec]
1E-3
6
0.01
0.1
Duty Factor, D = t1/t2
Peak T
P
DM
j
= Pdm x Zthjc + T
t
1
1
t
2
C
10
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