FGH30S130P Fairchild Semiconductor, FGH30S130P Datasheet - Page 5

• Manufacturer Part Number: FGH30S130P
• Description: IGBT Transistors 1300V 30A FS SA Trench IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30S130P

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1300 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 60 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-3PN
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C0
Typical Performance Characteristics
Figure 13. Turn-on Characteristics VS.
Figure 15. Switching Loss VS. Gate Resistance
Figure 17. Turn off Switching SOA Characteristics
1000
2500
100
100
0.5
10
10
10
1
1
1
0
E
off
Common Emitter
V
I
T
T
Common Emitter
V
T
T
C
C
C
{
Safe Operating Area
V
CC
C
C
GE
= 30A
GE
= 25
= 175
10
= 25
= 175
= 600V, V
= 15V, R
Collector Current
= 15V, T
Collector-Emitter Voltage, V
o
o
20
C
o
C
o
C
C
20
Collector Current, I
Gate Resistance, R
G
10
GE
C
= 10
= 175
= 15V
30

o
C
40
40
100
50
C
G
[A]
[

60
]
CE
[V]
t
70
d(on)
t
}
r
1000
E
on
80
60
5
Figure 16. Switching Loss VS. Collector Current
Figure 18. Forward Characteristics
Figure 14.Turn-off Characteristics VS.
1000
2500
100
30k
10k
100
1k
0.5
80
10
1
0
0
Common Emitter
V
T
T
Common Emitter
V
T
T
E
E
C
C
GE
GE
C
C
off
Collector Current
on
= 25
= 175
= 25
= 175
{
{
= 15V, R
= 15V, R
10
o
20
o
C
o
C
o
C
C
Collector Current, I
Collector Current, I
20
T
G
G
Forward Voltage, V
J
= 10
= 10
= 175


30
o
C
1
T
40
J
40
= 25
C
C
[A]
o
F
C
[A]
50
[V]
T
T
C
C
= 25
= 175
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t
t
d(off)
f
60
o
C
o
C
60
70
2