FGH30S130P Fairchild Semiconductor, FGH30S130P Datasheet - Page 3

• Manufacturer Part Number: FGH30S130P
• Description: IGBT Transistors 1300V 30A FS SA Trench IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30S130P

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1300 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 60 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-3PN
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
200
160
120
200
160
120
80
40
80
40
3.5
3.0
2.5
2.0
1.5
1.0
0
0
0.0
0
25
T
Common Emitter
V
T
T
C
Collector-EmitterCase Temperature, T
Common Emitter
V
GE
C
C
= 25
Characteritics
Temperature at Variant Current Level
GE
V
= 25
= 175
Collector-Emitter Voltage, V
GE
= 15V
= 15V
1.0
Collector-Emitter Voltage, V
o
50
= 17V
o
C
C
o
C
2
2.0
75
20V
15V
3.0
12V
100
4
I
C
4.0
= 15A
125
60A
30A
CE
6
CE
[V]
10V
7V
9V
8V
5.0
[V]
150
C
[
o
C]
6.0
175
8
3
Figure 4. Transfer Characteristics
Figure 6. Saturation Voltage vs. V
Figure 2. Typical Output Characteristics
200
160
120
200
160
120
80
40
80
40
20
16
12
0
0
0.0
8
4
0
0.0
4
T
Common Emitter
V
T
T
C
C
C
30A
CE
I
C
= 175
= 25
= 175
= 15A
= 20V
Collector-Emitter Voltage, V
Gate-Emitter Voltage,V
3.0
o
o
Gate-Emitter Voltage, V
C
o
C
C
2.0
8
V
GE
6.0
= 17V
60A
4.0
12
20V
9.0
Common Emitter
T
GE
C
15V
[V]
= 25
GE
6.0
16
CE
12.0
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[V]
o
GE
[V]
C
12V
10V
9V
8V
7V
15.0
8.0
20