SST25VF032B-80-4I-S2AF Microchip Technology, SST25VF032B-80-4I-S2AF Datasheet - Page 20

• Manufacturer Part Number: SST25VF032B-80-4I-S2AF
• Description: IC FLASH SER 32M 80MHZ SPI 8SOIC
• Manufacturer: Microchip Technology

Specifications of SST25VF032B-80-4I-S2AF

• Memory Type: FLASH
• Memory Size: 32M (4M x 8)
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Format - Memory: FLASH
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Data Bus Width: 8 bit
• Interface Type: SPI
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 25 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Data Sheet
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
Package Power Dissipation Capability (T
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
O
TABLE 8: DC Operating Characteristics
TABLE 9: Recommended System Power-up Timings
©2009 Silicon Storage Technology, Inc.
Range
Industrial
Symbol
I
I
I
I
I
I
I
V
V
V
V
V
Symbol
T
T
DDR
DDR2
DDR3
DDW
SB
LI
LO
PERATING
PU-READ
PU-WRITE
IL
IH
OL
OL2
OH
1. Output shorted for no more than one second. No more than one output shorted at a time.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
Parameter
Read Current
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
R
ANGE
Parameter
V
V
DD
DD
Ambient Temp
-40°C to +85°C
Min to Read Operation
Min to Write Operation
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
A
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
2.7-3.6V
V
0.7 V
(VDD = 2.7-3.6V)
V
DD
Min
DD
-0.2
DD
Limits
Max
0.2
0.4
0.8
20
10
20
25
30
20
1
1
AC C
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
See Figure 26
Units
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
ONDITIONS OF
Test Conditions
CE# = 0.1 V
CE# = 0.1 V
CE# = 0.1 V
CE# = V
CE# = V
V
V
V
V
I
I
I
OL
OL
OH
IN
OUT
DD
DD
= 100 µA, V
= 1.6 mA, V
= -100 µA, V
= GND to V
= V
= V
= GND to V
DD
DD
DD
DD
, V
Min
Max
T
DD
DD
DD
EST
32 Mbit SPI Serial Flash
IN
/0.9 V
/0.9 V
/0.9 V
Minimum
DD
DD
DD
= V
DD
DD
, V
100
100
= V
= V
DD
, V
= V
DD
DD
DD
DD
DD
DD
DD
or V
DD
@25 MHz, SO = open
@66 MHz, SO = open
@80 MHz, SO = open
= V
Min
Min
= V
Min
SS
DD
SST25VF032B
DD
Max
S71327-03-000
Max
L
= 30 pF
Units
µs
µs
DD
DD
T8.0 1327
T9.0 1327
+0.5V
+2.0V
05/09