SST25VF032B-80-4I-S2AF Microchip Technology, SST25VF032B-80-4I-S2AF Datasheet - Page 10

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SST25VF032B-80-4I-S2AF

Manufacturer Part Number
SST25VF032B-80-4I-S2AF
Description
IC FLASH SER 32M 80MHZ SPI 8SOIC
Manufacturer
Microchip Technology

Specifications of SST25VF032B-80-4I-S2AF

Memory Type
FLASH
Memory Size
32M (4M x 8)
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Format - Memory
FLASH
Speed
80MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Data Bus Width
8 bit
Interface Type
SPI
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
25 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Data Sheet
Byte-Program
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte must
be in the erased state (FFH) when initiating a Program
operation. A Byte-Program instruction applied to a pro-
tected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active low
for the duration of the Byte-Program instruction. The Byte-
©2009 Silicon Storage Technology, Inc.
FIGURE 7: Byte-Program Sequence
SCK
CE#
SO
SI
MODE 3
MODE 0
0 1 2 3 4 5 6 7 8
02
10
ADD.
Program instruction is initiated by executing an 8-bit com-
mand, 02H, followed by address bits [A
address, the data is input in order from MSB (bit 7) to LSB
(bit 0). CE# must be driven high before the instruction is
executed. The user may poll the Busy bit in the software
status register or wait T
self-timed Byte-Program operation. See Figure 7 for the
Byte-Program sequence.
HIGH IMPEDANCE
15 16
ADD.
23 24
ADD.
31 32
MSB LSB
32 Mbit SPI Serial Flash
BP
D
for the completion of the internal
IN
1327 F08.0
39
SST25VF032B
23
S71327-03-000
-A
0
]. Following the
05/09

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