CY7C1460AV25-200BZC Cypress Semiconductor Corp, CY7C1460AV25-200BZC Datasheet - Page 13

IC SRAM 36MBIT 200MHZ 165LFBGA

CY7C1460AV25-200BZC

Manufacturer Part Number
CY7C1460AV25-200BZC
Description
IC SRAM 36MBIT 200MHZ 165LFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1460AV25-200BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
36M (1M x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1460AV25-200BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05354 Rev. *D
2.5V TAP AC Test Conditions
Input pulse levels ............................................... V
Input rise and fall time .................................................... 1 ns
Input timing reference levels .........................................1.25V
Output reference levels.................................................1.25V
Test load termination supply voltage.............................1.25V
2.5V TAP AC Output Load Equivalent
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; V
Identification Register Definitions
V
V
V
V
V
V
I
Revision Number (31:29)
Device Depth (28:24)
Architecture/Memory Type(23:18)
Bus Width/Density(17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
Note:
11. All voltages referenced to V
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDO
Instruction Field
Z = 50Ω
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
DD
O
= 2.5V ±0.125V unless otherwise noted)
SS
Description
(GND).
CY7C1460AV25
1.25V
00000110100
(1M ×36)
001000
100111
01011
000
20pF
50Ω
1
I
I
I
I
GND ≤ V
OH
OH
OL
OL
= 1.0 mA
= 100 µA
= –1.0 mA
= –100 µA
SS
to 2.5V
I
≤ V
CY7C1462AV25
00000110100
DDQ
Test Conditions
(2M ×18)
001000
010111
01011
000
1
[11]
1.8V TAP AC Test Conditions
Input pulse levels..................................... 0.2V to V
Input rise and fall time .....................................................1 ns
Input timing reference levels........................................... 0.9V
Output reference levels .................................................. 0.9V
Test load termination supply voltage .............................. 0.9V
1.8V TAP AC Output Load Equivalent
V
V
V
V
V
V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
CY7C1464AV25
TDO
= 2.5V
= 2.5V
= 1.8V
= 2.5V
= 2.5V
= 1.8V
= 2.5V
= 1.8V
= 2.5V
= 1.8V
00000110100
(512K ×72)
001000
110111
01011
000
1
Z = 50Ω
O
Describes the version number
Reserved for Internal Use
Defines memory type and archi-
tecture
Defines width and density
Allows unique identification of
SRAM vendor
Indicates the presence of an ID
register
Min.
1.26
–0.3
–0.3
1.7
2.1
1.6
1.7
–5
CY7C1460AV25
CY7C1462AV25
CY7C1464AV25
Description
V
V
DD
DD
0.9V
Max.
0.36
0.4
0.2
0.2
0.7
5
+ 0.3
+ 0.3
20pF
50Ω
Page 13 of 27
DDQ
Unit
µA
V
V
V
V
V
V
V
V
V
V
– 0.2
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