S9S08SG8E2VTJR Freescale Semiconductor, S9S08SG8E2VTJR Datasheet - Page 329

• Manufacturer Part Number: S9S08SG8E2VTJR
• Description: 8-bit Microcontrollers - MCU 9S08 UC W/ 8K 0.25UM SGF
• Manufacturer: Freescale Semiconductor

Specifications of S9S08SG8E2VTJR

• Rohs: yes
• Core: HCS08
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 40 MHz
• Program Memory Size: 8 KB
• Data Ram Size: 512 B
• On-chip Adc: Yes
• Operating Temperature Range: - 40 C to + 85 C
• Package / Case: TSSOP-20
• Mounting Style: SMD/SMT
• A/d Bit Size: 10 bit
• A/d Channels Available: 12
• Interface Type: I2C, SCI, SPI
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Number Of Programmable I/os: 16
• Number Of Timers: 3
• Program Memory Type: Flash
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 2.7 V

A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
3
4
10
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
#
1
2
3
4
5
6
7
8
9
—
—
—
—
—
—
—
—
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/f
Byte program time (random
location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T
L
L
2
to T
to T
Characteristic
H
H
4
= –40°C to +125°C
= –40°C to +150°C
2
2
1
FCLK
T = 25°C
3
Table A-16. Flash Characteristics
)
MC9S08SG32 Data Sheet, Rev. 8
2
Symbol
V
V
n
prog/era
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
FLPE
Read
prog
se
10,000
10,000
10,000
Min
150
2.7
2.7
15
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
—
9
4
Appendix A Electrical Characteristics
Max
6.67
200
5.5
5.5
—
—
—
—
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
DD
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
—
Rated
Temp
supply.
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
—
323