W25Q16BVSSIG Winbond Electronics, W25Q16BVSSIG Datasheet - Page 22

IC SPI FLASH 16MBIT 8SOIC

W25Q16BVSSIG

Manufacturer Part Number
W25Q16BVSSIG
Description
IC SPI FLASH 16MBIT 8SOIC
Manufacturer
Winbond Electronics
Datasheet

Specifications of W25Q16BVSSIG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
104MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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W25Q16BV
11.2.7 Read Status Register-1 (05h) and Read Status Register-2 (35h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” for Status Register-1 and “35h” for
Status Register-2 into the DI pin on the rising edge of CLK. The status register bits are then shifted out on
the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in figure 6. The Status
Register bits are shown in figure 3a and 3b and include the BUSY, WEL, BP2-BP0, TB, SEC, SRP0,
SRP1, QE and SUS bits (see description of the Status Register earlier in this datasheet).
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write
Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when
the cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 6. The instruction is completed by driving /CS high.
Figure 6. Read Status Register Instruction Sequence Diagram
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