AT45DB161E-CCUD-T Adesto Technologies, AT45DB161E-CCUD-T Datasheet - Page 62

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AT45DB161E-CCUD-T

Manufacturer Part Number
AT45DB161E-CCUD-T
Description
Flash 16M 2.5-3.6V 85Mhz Serial Flash
Manufacturer
Adesto Technologies
Datasheet

Specifications of AT45DB161E-CCUD-T

Rohs
yes
Data Bus Width
8 bit
Memory Type
Data Flash
Memory Size
16 Mbit
Architecture
Flexible, Uniform Erase
Timing Type
Synchronous
Interface Type
SPI
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.5 V
Maximum Operating Current
26 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
BGA-9
Factory Pack Quantity
4000
Part # Aliases
AT45DB161D-CU

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT45DB161E-CCUD-T
Manufacturer:
Adesto Technologies
Quantity:
10 000
Figure 26-2. Algorithm for Programming or Re-programming of the Entire Array Randomly
Notes: 1.
2.
3.
To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within
every 20,000 cumulative page erase and program operations
A page address pointer must be maintained to indicate which page is to be rewritten. The auto page rewrite
command must use the address specified by the page address pointer
Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to
wait until 20,000 cumulative page erase and program operations have accumulated before rewriting all
pages of the sector. See application note AN-4 (“Using Adesto’s Serial DataFlash”) for more details
Main Memory Page Program
through Buffer
(82h, 85h)
Auto Page Rewrite
Main Memory Page
Address Pointer
to Buffer Transfer
Increment Page
(53h, 55h)
(58h, 59h)
START
END
Provide Address of
Page to Modify
(2)
(2)
Memory Page Program
Buffer to Main
Buffer Write
Adesto AT45DB161E [DATASHEET]
(84h, 87h)
(83h, 86h)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
8782D–DFLASH–11/2012
62

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