AT45DB161E-CCUD-T Adesto Technologies, AT45DB161E-CCUD-T Datasheet - Page 33

• Manufacturer Part Number: AT45DB161E-CCUD-T
• Description: Flash 16M 2.5-3.6V 85Mhz Serial Flash
• Manufacturer: Adesto Technologies

Specifications of AT45DB161E-CCUD-T

• Rohs: yes
• Data Bus Width: 8 bit
• Memory Type: Data Flash
• Memory Size: 16 Mbit
• Architecture: Flexible, Uniform Erase
• Timing Type: Synchronous
• Interface Type: SPI
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.5 V
• Maximum Operating Current: 26 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-9
• Factory Pack Quantity: 4000
• Part # Aliases: AT45DB161D-CU

10.2
Ultra-Deep Power-Down
The Ultra-Deep Power-Down mode allows the device to consume far less power compared to the standby and Deep
Power-Down modes by shutting down additional internal circuitry. Since almost all active circuitry is shutdown in this
mode to conserve power, the contents of the SRAM buffers cannot be maintained. Therefore, any data stored in the
SRAM buffers will be lost once the device enters the Ultra-Deep Power-Down mode.
When the device is in the Ultra-Deep Power-Down mode, all commands including the Status Register Read and Resume
from Deep Power-Down commands will be ignored. Since all commands will be ignored, the mode can be used as an
extra protection mechanism against program and erase operations.
Entering the Ultra-Deep Power-Down mode is accomplished by simply asserting the CS pin, clocking in the opcode 79h,
and then deasserting the CS pin. Any additional data clocked into the device after the opcode will be ignored. When the
CS pin is deasserted, the device will enter the Ultra-Deep Power-Down mode within the maximum time of t
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on an
even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and return to the standby mode
once the CS pin is deasserted. In addition, the device will default to the standby mode after a power cycle.
The Ultra-Deep Power-Down command will be ignored if an internally self-timed operation such as a program or erase
cycle is in progress. The Ultra-Deep Power-Down command must be reissued after the internally self-timed operation
has been completed in order for the device to enter the Ultra-Deep Power-Down mode.
Figure 10-3. Ultra-Deep Power-Down
SCK
SO
I
CS
CC
SI
Standby Mode Current
MSB
High-impedance
0
0
Active Current
1
1
1
2
Opcode
1
3
1
4
Ultra-Deep Power-Down Mode Current
0
5
0
6
1
7
t
EUDPD
Adesto AT45DB161E [DATASHEET]
8782D–DFLASH–11/2012
EUDPD
.
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