IS42S16100E-6BLI-TR ISSI, IS42S16100E-6BLI-TR Datasheet - Page 8

• Manufacturer Part Number: IS42S16100E-6BLI-TR
• Description: DRAM 16M 1Mx16 166Mhz SDRAM, 3.3v
• Manufacturer: ISSI

Specifications of IS42S16100E-6BLI-TR

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 1 Mbit x 16
• Package / Case: BGA-60
• Memory Size: 16 Mbit
• Maximum Clock Frequency: 166 MHz
• Access Time: 6 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 3 V
• Maximum Operating Current: 180 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 1000

8
IS42S16100E, IS45S16100E
DC ELECTRICAL CHARACTERISTICS
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time in-
2. Icc
Symbol Parameter
i
i
cc5
cc6
creases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
to suppress power supply voltage noise (voltage drops) due to these transient currents.
1
and Icc
Auto-Refresh Current
Self-Refresh Current
4
depend on the output load. The maximum values for Icc
Test Condition
t
CKE ≤ 0.2V
rc
= t
rc
(
miN
(Recommended Operation Conditions unless otherwise noted.)
)
CAS latency = 3 Com.
CAS latency = 2 Com
1
and Icc
Integrated Silicon Solution, Inc. — www.issi.com
4
are obtained with the output open state.
Ind, A1
Ind, A1
Ind, A1
Ind, A1
Com.
Com
Com
Com
A2
A2
A2
A2
Speed
DD
—
-5
-6
-6
-6
-7
-7
-7
-5
-6
-6
-6
-7
-7
-7
and GND for each memory chip
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
120
100
110
120
100
120
100
110
120
100
80
90
80
90
2
05/18/2010
Unit
mA
mA
mA
Rev. E