IS42S16100E-6BLI-TR ISSI, IS42S16100E-6BLI-TR Datasheet - Page 8
IS42S16100E-6BLI-TR
Manufacturer Part Number
IS42S16100E-6BLI-TR
Description
DRAM 16M 1Mx16 166Mhz SDRAM, 3.3v
Manufacturer
ISSI
Datasheet
1.IS42S16100E-6BLI.pdf
(83 pages)
Specifications of IS42S16100E-6BLI-TR
Rohs
yes
Data Bus Width
16 bit
Organization
1 Mbit x 16
Package / Case
BGA-60
Memory Size
16 Mbit
Maximum Clock Frequency
166 MHz
Access Time
6 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
180 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Factory Pack Quantity
1000
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IS42S16100E, IS45S16100E
DC ELECTRICAL CHARACTERISTICS
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time in-
2. Icc
Symbol Parameter
i
i
cc5
cc6
creases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
to suppress power supply voltage noise (voltage drops) due to these transient currents.
1
and Icc
Auto-Refresh Current
Self-Refresh Current
4
depend on the output load. The maximum values for Icc
Test Condition
t
CKE ≤ 0.2V
rc
= t
rc
(
miN
(Recommended Operation Conditions unless otherwise noted.)
)
CAS latency = 3 Com.
CAS latency = 2 Com
1
and Icc
Integrated Silicon Solution, Inc. — www.issi.com
4
are obtained with the output open state.
Ind, A1
Ind, A1
Ind, A1
Ind, A1
Com.
Com
Com
Com
A2
A2
A2
A2
Speed
DD
—
-5
-6
-6
-6
-7
-7
-7
-5
-6
-6
-6
-7
-7
-7
and GND for each memory chip
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
120
100
110
120
100
120
100
110
120
100
80
90
80
90
2
05/18/2010
Unit
mA
mA
mA
Rev. E
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