IS42S16100E-6BLI-TR ISSI, IS42S16100E-6BLI-TR Datasheet - Page 23

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IS42S16100E-6BLI-TR

Manufacturer Part Number
IS42S16100E-6BLI-TR
Description
DRAM 16M 1Mx16 166Mhz SDRAM, 3.3v
Manufacturer
ISSI
Datasheet

Specifications of IS42S16100E-6BLI-TR

Rohs
yes
Data Bus Width
16 bit
Organization
1 Mbit x 16
Package / Case
BGA-60
Memory Size
16 Mbit
Maximum Clock Frequency
166 MHz
Access Time
6 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
180 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Factory Pack Quantity
1000
IS42S16100E, IS45S16100E
Device Initialization At Power-On
(Power-On Sequence)
As is the case with conventional DRAMs, the IS42/4516100E
product must be initialized by executing a stipulated power-
on sequence after power is applied.
After power is applied and VDD and VDDQ reach their
stipulated voltages, set and hold the CKE and DQM pins
HIGH for 100 µs. Then, execute the precharge command
to precharge both bank. Next, execute the auto-refresh
command twice or more and define the device operation
mode by executing a mode register set command.
The mode register set command can be also set before
auto-refresh command.
Mode Register Settings
The mode register set command sets the mode register.
When this command is executed, pins A0 to A9, A10, and
A11 function as data input pins for setting the register, and
this data becomes the device internal OP code. This OP
code has four fields as listed in the table below.
Note that the mode register set command can be executed
only when both banks are in the idle (inactive) state. If
the Mode Register Set command is executed, the next
command (except NOP or Deselect) cannot be executed
until at least two clock cycles later, in order to avoid
violating tMCD.
CAS Latency
During a read operation, the between the execution of the
read command and data output is stipulated as the CAS
latency. This period can be set using the mode register
set command. The optimal CAS latency is determined
by the clock frequency and device speed grade. See the
“Operating Frequency / Latency Relationships” item for
details on the relationship between the clock frequency
and the CAS latency. See the table on the next page for
details on setting the mode register.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
05/18/2010
A11, A10, A9, A8, A7
A6, A5, A4
A2, A1, A0
Input Pin
A3
Mode Options
CAS Latency
Burst Length
Burst Type
Field
Burst Length
When writing or reading, data can be input or output data
continuously. In these operations, an address is input only
once and that address is taken as the starting address
internally by the device. The device then automatically
generates the following address. The burst length field
in the mode register stipulates the number of data items
input or output in sequence.In the IS42/4516100E product,
a burst length of 1, 2, 4, 8, or full page can be specified.
See the table on the next page for details on setting the
mode register.
Burst Type
The burst data order during a read or write operation
is stipulated by the burst type, which can be set by the
mode register set command.The IS42/4516100E product
supports sequential mode and interleaved mode burst
type settings. See the table on the next page for details
on setting the mode register. See the “Burst Length and
Column Address Sequence” item for details on DQ data
orders in these modes.
Write Mode
Burst write or single write mode is selected by the OP
code (A11, A10, A9) of the mode register.
A burst write operation is enabled by setting the OP code
(A11, A10, A9) to (0,0,0). A burst write starts on the same
cycle as a write command set. The write start address is
specified by the column address and bank select address
at the write command set cycle.
A single write operation is enabled by setting OP code (A11,
A10, A9) to (0, 0,1). In a single write operation, data is only
written to the column address and bank select address
specified by the write command set cycle without regard
to the bust length setting.
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