MT41J64M16JT-15E AIT:G Micron, MT41J64M16JT-15E AIT:G Datasheet - Page 60

• Manufacturer Part Number: MT41J64M16JT-15E AIT:G
• Description: DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 1.5V 96-Pin FBGA
• Manufacturer: Micron

Table 44: Differential Output Driver Characteristics
All voltages are referenced to V
Figure 24: DQ Output Signal
PDF: 09005aef84491df3
1Gb_AIT_AAT_DDR3_SDRAM.pdf – Rev. C 8/11 EN
Parameter/Condition
Output leakage current: DQ are disabled;
0V
Output slew rate: Differential; For rising and falling
edges, measure between V
V
Output differential cross-point voltage
Differential high-level output voltage
Differential low-level output voltage
Delta Ron between pull-up and pull-down for DQ/DQS
Test load for AC timing and output slew rates
OH,diff(AC)
V
OUT
= +0.2 × V
V
DDQ
; ODT is disabled; ODT is HIGH
DDQ
Notes:
OL,diff(AC)
1. RZQ of 240 ±1% with RZQ/7 enabled (default 34 driver) and is applicable after prop-
2. V
3. See Figure 26 (page 61) for the test load configuration.
4. See Table 46 (page 63) for the output slew rate.
5. See Table 33 (page 54) for additional information.
6. See Figure 25 (page 61) for an example of a differential output signal.
SS
er ZQ calibration has been performed at a stable temperature and voltage (V
V
SSQ
REF
= –0.2 × V
= V
= V
DDQ
SS
).
/2; slew rate @ 5 V/ns, interpolate for faster slew rate.
DDQ
and
Output Characteristics and Operating Conditions
60
V
V
Symbol
MM
OH,diff(AC)
V
OL,diff(AC)
SRQ
OX(AC)
1Gb: x8, x16 Automotive DDR3 SDRAM
I
OZ
Output to V
PUPD
diff
Micron Technology, Inc. reserves the right to change products or specifications without notice.
V
TT
REF
V
MAX output
V
MIN output
(V
OL(AC)
Min
OH(AC)
–10
–5
5
DDQ
- 150
+0.2 × V
–0.2 × V
/2) via 25 resistor
V
DDQ
DDQ
REF
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Max
12
10
5
+ 150
Unit
V/ns
mV
μA
%
V
V
DDQ
Notes
1, 2, 3
= V
1, 4
1, 4
1, 5
1
1
3
DD
;