MT41J64M16JT-15E AIT:G Micron, MT41J64M16JT-15E AIT:G Datasheet - Page 37

• Manufacturer Part Number: MT41J64M16JT-15E AIT:G
• Description: DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 1.5V 96-Pin FBGA
• Manufacturer: Micron

Electrical Specifications – DC and AC
DC Operating Conditions
Table 18: DC Electrical Characteristics and Operating Conditions
All voltages are referenced to V
Input Operating Conditions
Table 19: DC Electrical Characteristics and Input Conditions
All voltages are referenced to V
PDF: 09005aef84491df3
1Gb_AIT_AAT_DDR3_SDRAM.pdf – Rev. C 8/11 EN
Parameter/Condition
Supply voltage
I/O supply voltage
Input leakage current
Any input 0V
(All other pins not under test = 0V)
V
V
(All other pins not under test = 0V)
Parameter/Condition
V
V
Input reference voltage command/address bus
I/O reference voltage DQ bus
I/O reference voltage DQ bus in SELF REFRESH
Command/address termination voltage
(system level, not direct DRAM input)
REF
REFDQ
IN
IN
low; DC/commands/address busses
high; DC/commands/address busses
supply leakage current
= V
DD
/2 or V
V
IN
REFCA
V
Notes:
Notes:
DD
= V
, V
REF
DD
/2
1. V
2. V
3. V
4. The minimum limit requirement is for testing purposes. The leakage current on the V
1. V
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifi-
3. V
pin 0V
SS
SS
DC (0 Hz to 250 kHz) specifications. V
timing parameters.
pin should be minimal.
level. Externally generated peak noise (noncommon mode) on V
±1% × V
ceed ±2% of V
cations if the DRAM induces additional AC noise greater than 20 MHz in frequency.
level. Externally generated peak noise (noncommon mode) on V
±1% × V
ceed ±2% of V
DD
DD
REF
REFCA(DC)
REFDQ(DC)
and V
and V
(see Table 19).
V
IN
DD
DD
is expected to be approximately 0.5 × V
DDQ
DDQ
is expected to be approximately 0.5 × V
1.1V
around the V
around the V
must track one another. V
may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the
REFCA(DC)
REFDQ(DC)
V
V
V
Symbol
REFDQ(DC)
REFCA(DC)
REFDQ(SR)
Symbol
V
V
V
V
I
V
TT
VREF
IH
IL
.
DDQ
.
DD
I
I
REFCA(DC)
REFDQ(DC)
37
See Table 20
1Gb: x8, x16 Automotive DDR3 SDRAM
0.49 × V
0.49 × V
value. Peak-to-peak AC noise on V
value. Peak-to-peak AC noise on V
1.425
1.425
Min
Electrical Specifications – DC and AC
Min
V
V
–2
–1
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SS
SS
DD
DD
DD
and V
DDQ
must be
0.5 × V
DDQ
0.5 × V
0.5 × V
0.5 × V
Nom
Nom
1.5
1.5
n/a
n/a
–
–
DD
DD
must be at same level for valid AC
DDQ
and to track variations in the DC
and to track variations in the DC
DD
DD
DD
V
DD
See Table 20
. V
0.51 × V
0.51 × V
‹ 2010 Micron Technology, Inc. All rights reserved.
1.575
1.575
SS
Max
Max
V
V
2
1
= V
DD
DD
–
REFCA
REFDQ
SSQ
DD
DD
REFCA
REFDQ
.
may not exceed
may not exceed
should not ex-
Unit
should not ex-
Unit
μA
μA
V
V
V
V
V
V
V
V
Notes
Notes
1, 2
1, 2
1, 2
2, 3
4
4
5
REF