MT41J64M16JT-15E AIT:G Micron, MT41J64M16JT-15E AIT:G Datasheet - Page 47

• Manufacturer Part Number: MT41J64M16JT-15E AIT:G
• Description: DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 1.5V 96-Pin FBGA
• Manufacturer: Micron

ODT Characteristics
Figure 18: ODT Levels and I-V Characteristics
Table 27: On-Die Termination DC Electrical Characteristics
ODT Resistors
PDF: 09005aef84491df3
1Gb_AIT_AAT_DDR3_SDRAM.pdf – Rev. C 8/11 EN
Parameter/Condition
R
Deviation of VM with respect to
V
TT
DDQ
effective impedance
/2
Notes:
The ODT effective resistance R
DQ, DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values
and a functional representation are listed in Table 27 and Table 28 (page 48). The indi-
vidual pull-up and pull-down resistors (R
• R
• R
Table 28 (page 48) provides an overview of the ODT DC electrical characteristics. The
values provided are not specification requirements; however, they can be used as design
guidelines to indicate what R
• R
• R
To
other
circuitry
such as
RCV, . . .
1. Tolerance limits are applicable after proper ZQ calibration has been performed at a
2. Measurement definition for R
3. Measure voltage (VM) at the tested pin with no load:
4. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the de-
TT(PU)
TT(PD)
TT
TT
stable temperature and voltage (V
(page 49) if either the temperature or voltage changes after calibration.
I[V
vice operates between –40°C and 0°C (T
R
Chip in termination mode
TT
VM =
IH(AC)
=
= (V
= (V
Symbol
I(V
is made up of R
R
R
R
TT(PU)
is made up of R
TT(PD)
I
I
ODT
PU
PD
], then apply V
TT(EFF)
V
IH(AC)
OUT
DDQ
VM
2 × VM
IH(AC)
V
DDQ
)/|I
- V
) - I(V
- V
OUT
OUT
– 1
IL(AC)
IL(AC)
|, under the condition that R
)/|I
× 100
TT60(PD120)
IL(AC)
TT120(PD240)
Min
OUT
)
I
I
OUT
–5
OUT
TT
47
= I
TT
|, under the condition that R
to pin under test and measure current I[V
is targeted to provide:
PD
V
DQ
V
V
DDQ
SSQ
OUT
TT
is defined by MR1[9, 6, and 2]. ODT is applied to the
- I
1Gb: x8, x16 Automotive DDR3 SDRAM
PU
: Apply V
and R
DDQ
and R
See Table 28 (page 48)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
TT(PU)
Nom
= V
TT60(PU120)
C
IH(AC)
).
TT120(PU240)
DD
, V
and R
to pin under test and measure current
SSQ
TT(PU)
= V
TT(PD)
SS
Max
). Refer to ODT Sensitivity
is turned off
5
) are defined as follows:
TT(PD)
ODT Characteristics
‹ 2010 Micron Technology, Inc. All rights reserved.
is turned off
Unit
IL(AC)
%
]:
Notes
1, 2, 3
1, 2