K9F2808Q0B Samsung semiconductor, K9F2808Q0B Datasheet - Page 3

• Manufacturer Part Number: K9F2808Q0B
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

16M x 8 Bit Bit NAND Flash Memory
GENERAL DESCRIPTION
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
PRODUCT LIST
FEATURES
The K9F2808X0B is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or
3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation pro-
grams the 528-byte page in typical 200 s and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in a
page can be read out at 70ns/50ns(K9F2808Q0B:70ns, K9F2808U0B:50ns) cycle time per byte. The I/O pins serve as the ports for
address and data input/output as well as command input. The on-chip write control automates all program and erase functions
including pulse repetition, where required, and internal verification and margining of data. Even write-intensive systems can take
advantage of the K9F2808X0B’ s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with
real time mapping-out algorithm.
The K9F2808X0B is suitable for use in data memory of mobile communication system to reduce not only mount area but also power
consumption.
- Serial Page Access
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
- Random Access : 10 s(Max.)
- Program Time
- Block Erase Time : 2ms(Typ.)
Voltage Supply
Organization
Automatic Program and Erase
528-Byte Page Read Operation
Fast Write Cycle Time
- K9F2808Q0B : 1.7~1.9V
- K9F2808U0B : 2.7 ~ 3.6 V
- K9F2808Q0B : 70ns
- K9F2808U0B : 50ns
- K9F2808Q0B : 300 s(Typ.)
- K9F2808U0B : 200 s(Typ.)
K9F2808Q0B-D
K9F2808U0B-Y
K9F2808U0B-D
K9F2808U0B-V
Part Number
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
2.7 ~ 3.6V
Vcc Range
1.7 ~ 1.9V
3
- Endurance : 100K Program/Erase Cycles
- Program/Erase Lockout During Power Transitions
- Data Retention : 10 Years
- K9F2808U0B-YCB0/YIB0 :
- K9F2808X0B-DCB 0/ DIB0
- K9F2808U0B-VCB0/VIB0
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
48 - Pin WSOP I (12X17X0.7mm)
* K9F2808U0B-V(WSOPI ) is the same device as
K9F2808U0B-Y(TSOP1) except package type.
Organization
X8
FLASH MEMORY
PKG Type
WSOP1
TSOP1
TBGA
TBGA