K9F2808Q0B Samsung semiconductor, K9F2808Q0B Datasheet - Page 29

• Manufacturer Part Number: K9F2808Q0B
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Data Protection & Powerup sequence
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V/2V(K9F2808Q0B:1.1V, K9F2808U0B:2V). WP pin provides hardware pro-
tection and is recommended to be kept at V
before internal circuit gets ready for any command sequences as shown in Figure 14. The two step command sequence for program/
erase provides additional software protection.
Figure 14. AC Waveforms for Power Transition
WP
WE
V
CC
K9F2808Q0B : ~ 1.5V
K9F2808U0B : ~ 2.5V
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
10 s
IL
during power-up and power-down and recovery time of minimum 1 s is required
High
29
FLASH MEMORY
K9F2808Q0B : ~ 1.5V
K9F2808U0B : ~ 2.5V