K9F2808Q0B Samsung semiconductor, K9F2808Q0B Datasheet - Page 27

• Manufacturer Part Number: K9F2808Q0B
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
READ ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Two read cycles sequentially output the manufacture code(ECh), and the device code (73h) respectively. The command register
remains in Read ID mode until further commands are issued to it.
Figure 11 shows the operation sequence.
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when W P is high. Refer to table 4 for device status after reset operation. If the device is
already in reset state, new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Reset command is not necessary for normal operation. Refer to Figure 12 below.
Figure 12. RESET Operation
R/B
I/O
Table4. Device Status
Figure 11. Read ID Operation
CLE
CE
WE
ALE
RE
I/O
0
0
~
~
7
7
Operation Mode
90h
FFh
Address. 1cycle
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
00h
t
CLR
t
WHR
After Power-up
t
AR1
t
CEA
Read 1
t
REA
t
RST
K9F2808Q0B
K9F2808U0B
27
Maker code
Device
ECh
Device code
Device
Code*
Device Code*
Waiting for next command
33h
73h
FLASH MEMORY
After Reset