K9F2808Q0B Samsung semiconductor, K9F2808Q0B Datasheet - Page 15

• Manufacturer Part Number: K9F2808Q0B
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

NAND Flash Technical Notes (Continued)
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Block Replacement
*
Erase Error
Erase Flow Chart
: If erase operation results in an error, map out
the failing block and replace it with another block.
1st
(n-1)th
nth
(page)
1st
(n-1)th
nth
(page)
*
an error occurs.
No
Block A
Block B
Read Status Register
Write Block Address
Erase Completed
or R/B = 1 ?
I/O 0 = 0 ?
I/O 6 = 1 ?
Write D0h
Write 60h
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
Start
Yes
Yes
2
Buffer memory of the controller.
1
No
15
Reclaim the Error
Read Flow Chart
No
FLASH MEMORY
Page Read Completed
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Start
Yes