K9F2808Q0B Samsung semiconductor, K9F2808Q0B Datasheet - Page 17

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K9F2808Q0B

Manufacturer Part Number
K9F2808Q0B
Description
16M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant saving in power consumption.
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
I/O
Figure 5. Program Operation with CE don’t-care.
I/O
CE
WE
CLE
ALE
Figure 6. Read Operation with CE don’t-care.
CE
WE
R/B
CLE
ALE
WE
CE
RE
0
0
~
~
7
7
t
CS
00h
80h
Start Add.(3Cycle)
Start Add.(3Cycle)
t
WP
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
On K9F2808U0B_Y or K9F2808U0B_V
CE must be held
low during tR
t
CH
t
R
Data Input
17
I/O
CE
RE
0
~
7
CE don’t-care
CE don’t-care
t
CEA
Data Output(sequential)
t
REA
FLASH MEMORY
Data Input
out
10h

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