K9F2808Q0B Samsung semiconductor, K9F2808Q0B Datasheet - Page 2

• Manufacturer Part Number: K9F2808Q0B
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
Revision History
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
Revision No.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
0.4
0.5
0.6
History
1. I
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
2. AC parameter is changed.
1. Parameters are changed in 1.8V part(K9F2808Q0B) .
1. Parameters are changed in 1.8V part(K9F2808Q0B) .
tRP(min.) : 30ns --> 25ns
OL
- tCH is changed from 15ns to 20ns
- tCLH is changed from 15ns to 20ns
- tALH is changed from 15ns to 20ns
- tDH is changed from 15ns to 20ns
- tRP is changed from 25ns to 35ns
- tWB is changed from 100ns to 150ns
- tREA is changed from 40ns to 45ns
(R/B) of 1.8V device is changed.
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
2
Draft Date
Nov 5th 2001
Feb 15th 2002
May 3rd 2002
FLASH MEMORY
Remark
Preliminary