K9F2808Q0B Samsung semiconductor, K9F2808Q0B Datasheet - Page 10

• Manufacturer Part Number: K9F2808Q0B
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
ABSOLUTE MAXIMUM RATINGS
NOTE:
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and VccQ pins. During transitions, this level may undershoot to -2.0V for periods
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2808X0B-YCB0,DCB 0:T
DC AND OPERATING CHARACTERISTICS
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to V
Temperature
Under Bias
Storage Temperature
Operat-
Current
<20ns. Maximum DC voltage on input/output pins is V
Supply Voltage
Supply Voltage
Supply Voltage
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
ing
Parameter
Parameter
Sequential Read
Program
Erase
Parameter
K9F2808X0B-YCB0,DCB0
Symbol
K9F2808X0B-YIB0,DIB 0
V
V
V
CC
CC
SS
Q
Symbol
(R/B)
SS
I
I
I
I
I
V
V
CC
CC
CC
V
SB
SB
I
V
I
I
LO
OL
OH
LI
OL
IH
IL
1
2
1
2
3
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
CE=V
K9F2808Q0B: tRC=70ns
K9F2808U0B: tRC=50ns
CE=V
CE=V
V
V
I/O pins
Except I/O pins
K9F2808Q0B :I
K9F2808U0B :I
K9F2808Q0B :I
K9F2808U0B :I
K9F2808Q0B :V
K9F2808U0B :V
Min
1.7
1.7
IN
OUT
0
=0 to Vcc(max)
=0 to Vcc(max)
Test Conditions
IL,
IH
CC
K9F2808Q0B(1.8V)
, WP =0V/V
I
-0.2, WP =0V/V
CCQ
OUT
+0.3V which, during transitions, may overshoot to V
=0mA
-
-
-
Typ.
1.8
1.8
OH
OL
Symbol
OH
OL
V
OL
0
OL
V
T
T
IN/OUT
V
=100uA
=2.1mA
=-400 A
=-100 A
CC
BIAS
STG
=0.4V
CC
=0.1V
CC
Q
(Recommended operating conditions otherwise noted.)
CC
A
=0 to 70 C, K9F2808X0B-YIB0,DIB0:T
10
Max
1.9
1.9
V
VccQ-0.4
K9F2808Q0B(1.8V)
0
V
CC
CC
K9F2808Q0B(1.8V)
Min
-0.3
-0.6 to + 2.45
-0.2 to + 2.45
-0.2 to + 2.45
Q-0.1
3
-
-
-
-
-
-
-
-
-0.4
Typ
10
Min
5
5
5
4
-
-
-
-
-
-
-
2.7
2.7
0
-10 to + 125
-40 to + 125
-65 to + 150
VccQ+0
VCC
K9F2808U0B(3.3V)
Max
+0.3
Rating
0.4
0.1
15
15
15
50
.3
1
10
10
-
-
C C
FLASH MEMORY
K9F2808U0B(3.3V)
Typ.
+2.0V for periods <20ns.
3.3
3.3
Min
-0.3
2.0
2.0
2.4
0
8
-
-
-
-
-
-
-
-
K9F2808U0B(3.3V)
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
Typ
10
10
10
10
10
-
-
-
-
-
-
-
-
A
=-40 to 85 C)
Max
V
3.6
3.6
V
0
CC
CC
Max
0.8
0.4
20
20
20
50
Q+0.3
1
10
10
-
-
+0.3
Unit
Unit
V
V
V
Unit
C
C
V
V
V
mA
mA
V
A