HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 53

• Manufacturer Part Number: HYB18L256160B
• Description: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

3.4
The above characteristics are specified under nominal process variation / condition
Temperature (Tj): Nominal = 50 °C,
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
Voltag
e (V)
0.00
0.40
0.65
0.85
1.00
1.40
1.50
1.65
1.80
1.95
Half Drive Strength
Pull-Down Current (mA)
Nominal
Low
0.0
15.1
20.3
22.0
22.6
23.5
23.6
23.8
23.9
24.0
Pullup and Pulldown Characteristics
Nominal
High
0.0
20.5
28.5
32.0
33.5
35.0
35.3
35.5
35.7
35.9
V
DDQ
-18.8
-18.2
-17.6
-16.7
-9.4
-6.6
-1.8
Pull-Up Current (mA)
Nominal
Low
-19.7
3.8
9.8
: Nominal = 1.80 V
Nominal
High
-33.4
-32.0
-31.0
-29.9
-28.7
-20.4
-17.1
-11.4
-4.8
2.5
53
Full Drive Strength
Nominal
Low
0.0
30.2
40.5
43.9
45.2
46.9
47.2
47.5
Pull-Down Current (mA)
47.7
48.0
Half Drive Strength and Full Drive Strength
Nominal
High
0.0
41.0
57.0
64.0
67.0
70.0
70.5
71.0
71.4
71.8
HY[B/E]18L256160B[C/F]L-7.5
Nominal
Low
-39.3
-37.6
-36.4
-35.1
-33.3
-18.8
-13.2
-3.5
Pull-Up Current (mA)
7.5
19.6
256-Mbit Mobile-RAM
TABLE 29
Nominal
High
-66.7
-63.9
-61.9
-59.8
-57.3
-40.7
-34.1
-22.7
-9.6
5.0
Data Sheet