HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 35

• Manufacturer Part Number: HYB18L256160B
• Description: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

2.4.6.4
A WRITE burst may be followed by, or truncated with a READ command. The READ command can be performed to the same
or a different (active) bank. With the registration of the READ command, data inputs will be ignored and no WRITE will be
performed, as shown in
2.4.6.5
A WRITE burst may be followed by, or truncated with a PRECHARGE command to the same bank, provided that Auto
Precharge was not activated. This is shown in
The PRECHARGE command should be issued
burst was registered. Additionally, when truncating a WRITE burst, DQM must be pulled to mask input data presented during
t
same bank cannot be issued until
In the case of a WRITE being executed to completion, a PRECHARGE command issued at the optimum time (as described
above) provides the same operation that would result from the same WRITE burst with Auto Precharge enabled. The
disadvantage of the PRECHARGE command is that it requires that the command and address busses be available at the
appropriate time to issue the command. The advantage of the PRECHARGE command is that it can be used to truncate bursts.
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
WR
prior to the PRECHARGE command. Following the PRE-CHARGE command, a subsequent ACTIVE command to the
WRITE to READ
WRITE to PRECHARGE
Figure
33.
t
RP
is met.
Figure
t
WR
after the clock edge at which the last desired data element of the WRITE
34.
35
HY[B/E]18L256160B[C/F]L-7.5
WRITE to READ Timing
256-Mbit Mobile-RAM
FIGURE 33
Data Sheet