HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 11

no-image

HYB18L256160B

Manufacturer Part Number
HYB18L256160B
Description
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
Manufacturer
QIMONDA [Qimonda AG]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HYB18L256160BC-7.5
Manufacturer:
STM
Quantity:
50 000
Part Number:
HYB18L256160BC-7.5
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
HYB18L256160BCL-7.5
Manufacturer:
QIMONDA
Quantity:
1 391
Part Number:
HYB18L256160BCX-7.5
Manufacturer:
QIMONDA
Quantity:
1 391
Part Number:
HYB18L256160BF-7.5
Manufacturer:
QIMONDA
Quantity:
11 200
Part Number:
HYB18L256160BF-7.5
Manufacturer:
PANASONIC
Quantity:
5 950
Part Number:
HYB18L256160BF-7.5
Manufacturer:
INFINEON
Quantity:
1 000
Part Number:
HYB18L256160BF-7.5
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
HYB18L256160BF-7.5
Quantity:
500
Company:
Part Number:
HYB18L256160BF-7.5
Quantity:
500
Part Number:
HYB18L256160BFX-7.5
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
2.2.1.2
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type
and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the
starting column address, as shown in
2.2.1.3
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a READ command and the
availability of the first piece of output data. The latency can be programmed to 2 or 3 clocks.
If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available with clock edge n + m
(for details please refer to the READ command description).
2.2.1.4
When A9 = 0, the burst length programmed via A0-A2 applies to both read and write bursts; when A9 = 1, write accesses
consist of single data elements only.
2.2.1.5
The Extended Mode Register controls additional low power features of the device. These include the Partial Array Self Refresh
(PASR, bits A0-A2)), the Temperature Compensated Self Refresh (TCSR, bits A3-A4)) and the drive strength selection for the
DQs (bits A5-A6). The Extended Mode Register is programmed via the MODE REGISTER SET command (with BA0 = 0 and
BA1 = 1) and will retain the stored information until it is programmed again or the device loses power.
The Extended Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before
initiating any subsequent operation. Violating either of these requirements result in unspecified operation.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
Field
DS
Bits
[6:5]
Burst Type
Read Latency
Write Burst Mode
Extended Mode Register
Type
w
Description
Selectable Drive Strength
00
01
Note: All other bit combinations are RESERVED.
Table
B
B
Full Drive Strength
Half Drive Strength (default)
6.
11
Extended Mode Register Definition (BA[1:0] = 10
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
TABLE 7
Data Sheet
B
)

Related parts for HYB18L256160B