NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 64

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
12.2
64/69
Figure 43. Resistor value versus waveform timings for Ready/Busy signal
1. T = 25°C.
Data protection
The Numonyx NAND devices aredesigned to guarantee data protection during power
transitions.
A V
In the V
low (V
figure.
Figure 44. Data protection
DD
IL
detection circuit disables all NAND operations, if V
) to guarantee hardware protection during power transitions as shown in the below
DD
V DD
W
range from V
Nominal Range
V LKO
LKO
Locked
to the lower limit of nominal range, the WP pin should be kept
200
150
100
50
0
1
1.8
2.4
50
t f
V DD = 3.3 V, C L = 50 pF
2
1.8
100
1.2
R P (K
t r
Locked
3
150
1.8
0.8
ibusy
DD
NAND04G-B2D, NAND08G-BxC
is below the V
200
4
1.8
2
1
3
4
0.6
Ai11086
LKO
threshold.
ai12476