NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 48

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

Program and erase times and endurance cycles
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Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Table 24.
Page Program/Multiplane Program time
Block Erase/Multiplane Erase time
Multiplane Program time (1.8 V)
Multiplane Erase (1.8 V)
Multiplane Program Busy time (t
Multiplane Erase Busy time (t
Cache Read Busy time (t
Program/erase cycles per block (with ECC)
Data retention
Table
24.
Program erase times and program erase endurance cycles
Parameters
RCBSY
IEBSY
)
IPBSY
)
)
100 000
Min
10
NAND Flash
NAND04G-B2D, NAND08G-BxC
Typ
200
250
1.5
0.5
0.5
2
3
Max
700
800
2.5
t
2
1
1
R
Cycles
Years
Unit
ms
ms
µs
µs
µs
µs
µs