NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 54

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
Table 31.
1. The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See
2. ES = Electronic Signature.
3.
4. During a Program/Erase Enable Operation, t
Figure 25. Command latch AC waveforms
54/69
t
t
t
WHWH
VHWH
VLWH
Figure
During a Program/Erase Disable Operation, t
t
ADL
CL
AL
I/O
W
E
is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.
43.
t
t
ADL
WW
AC characteristics for operations
(3)
(4)
Last address latched to data loading time during program
operations
Write protection time
(ALSetup time)
H(E Setup time)
(CL Setup time)
tALLWH
tELWH
tCLHWH
(Data Setup time)
tDVWH
WW
WW
is the delay from WP high to W High.
is the delay from WP Low to W High.
Command
(1)
(continued)
tWLWH
tWHDX
(Data Hold time)
(E Hold time)
tWHEH
(CL Hold time)
tWHCLL
(AL Hold time)
tWHALH
NAND04G-B2D, NAND08G-BxC
Min
Min
Figure
100
100
41,
Figure 42
100
70
and
ai12470b
ns
ns