NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 56

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
Figure 28. Sequential data output after read AC waveforms
1. CL = Low, AL = Low, W = High.
2. t
Figure 29. Sequential data output after read AC waveforms (EDO mode)
1. In EDO mode, CL and AL are Low, V
2. t
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RHQX
RLQX
is applicable for frequencies high than 33 MHz (i.e. t
is applicable for frequencies lower than 33MHz (i.e. t
RB
RB
I/O
I/O
R
R
E
E
tELQV
tBHRL
tBHRL
(R Accesstime)
(R Accesstime)
tRLQV
tRLQV
tRLRH
IL
, and W is High, V
(R High Holdtime)
tRHRL
(Read Cycle time)
Data Out
tRLRL
tRLRL
tRLQV
Data Out
IH
tRHRL
RLRL
.
RLRL
tRHQZ
Data Out
lower than 30 ns).
higher than 30ns).
tRLQX
tRLQV
tRLQV
Data Out
NAND04G-B2D, NAND08G-BxC
Data Out
tEHQX
tEHQZ
tEHQZ
tEHQX
tRHQX (2)
tRHQZ
Data Out
tRHQX (2)
tRHQZ
ai13174
ai13175