NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 36

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

Device operations
6.14
36/69
Table 15.
1. See
Read electronic signature
The devices contain a manufacturer code and device code. The following three steps are
required to read these codes:
1.
2.
3.
One bus write cycle to issue the Read Electronic Signature command (90h)
One bus write cycle to input the address (00h)
Five bus read cycles to sequentially output the data (as shown in
signature).
Bit
0
1
2
3
4
5
6
7
Table 14: Status Register bits
EDC Status Register bits
Ready/busy
Ready/busy
Write protect
EDC validity
EDC status
Reserved
Reserved
Pass/fail
Name
(1)
(1)
for a description of SR5 and SR6 bits.
Logic level
‘don’t care’
‘don’t care’
‘1’
‘0’
‘1’
‘0’
‘1’
‘0’
‘1’
‘0’
‘1’
‘0’
‘1’
‘0’
Copy back or multiplane copy back
operation failed
Copy back or multiplane copy back
operation succeeded
Error
No error
Valid
Invalid
-
-
Ready
Busy
Ready
Busy
Not protected
Protected
NAND04G-B2D, NAND08G-BxC
Definition
Table 16: Electronic