MC68HC908AB32 MOTOROLA [Motorola, Inc], MC68HC908AB32 Datasheet - Page 377
![no-image](/images/no-image-200.jpg)
MC68HC908AB32
Manufacturer Part Number
MC68HC908AB32
Description
HCMOS Microcontroller Unit
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MC68HC908AB32.pdf
(392 pages)
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23.7 EEPROM and Memory Characteristics
MC68HC908AB32
MOTOROLA
Notes:
Low-voltage inhibit reset/recover hysteresis – target
POR rearm voltage
POR reset voltage
POR rise time ramp rate
1. V
2. Typical values reflect average measurements at midpoint of voltage range, 25 C only.
3. Run (operating) I
4. Wait I
5. Stop I
6. Pullups are disabled. Port B leakage is specified in
7. Maximum is highest voltage that POR is guaranteed.
8. Maximum is highest voltage that POR is possible.
9. If minimum V
Notes:
RAM data retention voltage
EEPROM programming time per byte
EEPROM erasing time per byte
EEPROM erasing time per block
EEPROM erasing time per bulk
EEPROM programming voltage discharge period
Number of programming operations to the same EEPROM
EEPROM write/erase cycles at 10ms write time (85 C)
EEPROM data retention after 10,000 write/erase cycles
loads. Less than 100 pF on all outputs. C
affects run I
than 100 pF on all outputs. C
I
V
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must
DD
DD
DD
byte before erase
be erased before it can be programmed again.
. Measured with PLL and LVI enabled.
= 5.0 Vdc
is reached.
DD
DD
measured using external square wave clock source (f
is measured with OSC1 = V
DD
DD
. Measured with all modules enabled.
is not reached before the internal POR reset is released, RST must be driven low externally until minimum
Characteristic
DD
—
(8)
10%, V
(7)
Rev. 1.0
measured using external square wave clock source (f
(1)
Characteristic
(9)
SS
= 0 Vdc, T
L
Freescale Semiconductor, Inc.
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly affects wait
(1)
For More Information On This Product,
SS
A
.
= T
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly
L
Go to: www.freescale.com
to T
Electrical Specifications
H
, unless otherwise noted
23.10 ADC
V
Symbol
PORRST
R
V
H
BUS
POR
POR
Characteristics.
LVI
= 8.4 MHz). All inputs 0.2 V from rail. No dc loads. Less
Symbol
t
t
t
EBLOCK
t
t
EEPGM
V
EBYTE
EBULK
EEFPV
BUS
RDR
—
—
—
0.02
Min
100
0
0
= 8.4 MHz). All inputs 0.2 V from rail. No dc
EEPROM and Memory Characteristics
10,000
Typ
Min
100
0.7
10
10
10
10
10
—
150
—
—
—
(2)
Electrical Specifications
Max
—
—
—
—
—
—
—
—
8
Max
200
800
—
—
Technical Data
Cycles
Years
Unit
ms
ms
ms
ms
—
V
s
V/ms
Unit
mV
mV
mV
377
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