MT44K16M36 MICRON [Micron Technology], MT44K16M36 Datasheet - Page 8

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MT44K16M36

Manufacturer Part Number
MT44K16M36
Description
576Mb: x18, x36 RLDRAM 3
Manufacturer
MICRON [Micron Technology]
Datasheet

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General Description
General Notes
PDF: 09005aef84003617
576mb_rldram3.pdf – Rev. B 1/12 EN
The Micron
data storage—telecommunications, networking, cache applications, etc. The chip’s 16-
bank architecture is optimized for sustainable high-speed operation.
The DDR I/O interface transfers two data bits per clock cycle at the I/O balls. Output
data is referenced to the READ strobes.
Commands, addresses, and control signals are also registered at every positive edge of
the differential input clock, while input data is registered at both positive and negative
edges of the input data strobes.
Read and write accesses to the RL3 device are burst-oriented. The burst length (BL) is
programmable to 2, 4, or 8 by a setting in the mode register.
The device is supplied with 1.35V for the core and 1.2V for the output drivers. The 2.5V
supply is used for an internal supply.
Bank-scheduled refresh is supported with the row address generated internally.
The 168-ball FBGA package is used to enable ultra-high-speed data transfer rates.
• The functionality and the timing specifications discussed in this data sheet are for the
• Any functionality not specifically stated is considered undefined, illegal, and not sup-
• Nominal conditions are assumed for specifications not defined within the figures
• Throughout this data sheet, the terms "RLDRAM," "DRAM,” and "RLDRAM 3" are all
• References to DQ, DK, QK, DM, and QVLD are to be interpeted as each group collec-
• Non-multiplexed operation is assumed if not specified as multiplexed.
DLL enable mode of operation.
ported, and can result in unknown operation.
shown in this data sheet.
used interchangeably and refer to the RLDRAM 3 SDRAM device.
tively, unless specifically stated otherwise. This includes true and complement signals
of differential signals.
®
RLDRAM
®
3 is a high-speed memory device designed for high-bandwidth
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
576Mb: x18, x36 RLDRAM 3
General Description
© 2011 Micron Technology, Inc. All rights reserved.

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