S29PL-N SPANSION [SPANSION], S29PL-N Datasheet - Page 76

• Manufacturer Part Number: S29PL-N
• Description: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

74
17. Command sequence resets device for next command after write-
18. Entry commands are needed to enter a specific mode to enable
19. The Exit command must be issued to reset the device into read
20. The following mode cannot be performed at the same time.
Lock Register Command Set Definitions
Password Protection Command Set Definitions
Non-Volatile Sector Protection Command Set Definitions
Global Non-Volatile Sector Protection Freeze Command Set Definitions
Volatile Sector Protection Command Set Definitions
Legend:
X = Don’t care
RA = Read Address.
RD = Read Data.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse whichever
happens later.
PD = Program Data. Data latches on the rising edge of WE# or CE#
pulse, whichever occurs first.
SA = Sector Address. PL127/129N = A22 – A15; PL256N = A23 –
Password
PPB Lock
Register
A15
Lock
DYB
PPB
Bit
to-buffer operation.
instructions only available within that mode.
mode. Otherwise the device hangs.
Autoselect/CFI/Unlock Bypass/Secured Silicon. Command
sequence resets device for next command after write-to-buffer
operation.
Lock Register Command Set Entry (25)
Lock Register Bits Program (26)
Lock Register Bits Read
Lock Register Command Set Exit (27)
Password Protection
Command Set Entry (25)
Password Program
Password Read
Password Unlock
Password Protection
Command Set Exit (27)
Non-Volatile Sector Protection
Command Set Entry (25)
PPB Program
All PPB Erase (22)
PPB Status Read
Non-Volatile Sector Protection
Command Set Exit (27)
Global Volatile Sector Protection Freeze
Command Set Entry (25)
PPB Lock Bit Set
PPB Lock Bit Status Read
Global Volatile Sector Protection Freeze
Command Set Exit (27)
Volatile Sector Protection
Command Set Entry (25)
DYB Set
DYB Clear
DYB Status Read
Volatile Sector Protection
Command Set Exit (27)
Command Sequence
(Notes)
Table 12.2 Sector Protection Commands
3
2
1
2
3
2
4
7
2
3
2
2
1 [BA]SA RD(0)
2
3
2
1
2
3
2
2
1 [BA]SA RD(0)
2
S29PL-N MirrorBit™ Flash Family
Addr Data Addr
555
555
555
555
555
XX
XX
XX
XX
XX
XX
XX
XX
BA
XX
XX
XX
XX
00
00
00
First
RD(0)
PWD0
data
AA
A0
90
AA
A0
25
90
AA
A0
80
90
AA
A0
90
AA
A0
A0
90
P r e l i m i n a r y
[BA]SA
[BA]SA
[BA]SA
00/01
02/03
2AA
2AA
2AA
2AA
2AA
00
XX
01
00
XX
00
XX
XX
XX
XX
Second
21. Command is valid when device is ready to read array data or
22. Requires Entry command sequence prior to execution. Secured
BA = Bank Address. PL256N = A23 – A21; PL127N = A22 – A20;
PL127N = A21 – A20.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
PWD3 – PWD0 = Password Data. PD3 – PD0 present four 16 bit
combinations that represent the 64-bit Password
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0, if
unprotected, DQ0 = 1.
PWD0/
PWD1/
PWD2/
PWD3
PWD1
Data
data
55
00
55
03
00
55
00
30
00
55
00
00
55
00
01
00
when device is in autoselect mode. Address equals 55h on all
future devices, but 555h for PL256N.
Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
[BA]555
[BA]555
Addr
555
555
555
02
00
Third
Bus Cycles (Notes
PWD2
PWD0
Data Addr Data Addr Data Addr Data Addr Data
40
60
C0
50
E0
03
01
Fourth
PWD3
PWD1
1
– 6)
02
Fifth
S29PL-N_00_A4 November 23, 2005
PWD2
03
Sixth
PWD3
00
Seventh
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