S29PL-N SPANSION [SPANSION], S29PL-N Datasheet - Page 45

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S29PL-N

Manufacturer Part Number
S29PL-N
Description
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet
7.5
Note:
November 23, 2005 S29PL-N_00_A4
V
V
CC
SS
A
WP#/ACC
max
RESET#
Simultaneous Read/Write
DQ0 – DQ15
A
A
A
WE#
= A23 (PL256N), A22 (PL127N)
max
max
CE#
max
–A0
Figure 7.5 Simultaneous Operation Block Diagram for S29PL256N and S29PL127N
– A0
– A0
The simultaneous read/write feature allows the host system to read data from one bank of mem-
ory while programming or erasing another bank of memory. An erase operation may also be
suspended to read from or program another location within the same bank (except the sector
being erased).
cycles may be initiated for simultaneous operation with zero latency. See the table,
teristics
Command
Register
Control
State
for read-while-program and read-while-erase current specifications.
and
Mux
Mux
Figure 11.12, Back-to-back Read/Write Cycle Timings
P r e l i m i n a r y
Bank A Address
Bank D Address
Bank B Address
RY/BY#
Bank C Address
S29PL-N MirrorBit™ Flash Family
Control
Status
X-Decoder
X-Decoder
X-Decoder
X-Decoder
Bank D
Bank A
Bank B
Bank C
shows how read and write
Mux
OE#
DC Charac-
DQ15 – DQ0
43

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