S29PL-N SPANSION [SPANSION], S29PL-N Datasheet - Page 32

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S29PL-N

Manufacturer Part Number
S29PL-N
Description
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet
30
7.4.3 Sector Erase
The sector erase function erases one or more sectors in the memory array. (See
Figure
Erase algorithm automatically programs and verifies the entire memory for an all zero data pat-
tern prior to electrical erase. The system is not required to provide any controls or timings during
these operations.
After the command sequence is written, a sector erase time-out of no less than t
ing the time-out period, additional sector addresses and sector erase commands can be written.
Loading the sector erase buffer can be done in any sequence, and the number of sectors can be
from one sector to all sectors. The time between these additional cycles must be less than t
Any sector erase address and command following the exceeded time-out (t
RESET. Issue Write Buffer
PA
Abort Reset Command
7.3.) The device does not require the system to preprogram prior to erase. The Embedded
Write Next Word,
Decrement wc:
data , wc = wc – 1
Figure 7.2 Write Buffer Programming Operation
S29PL-N MirrorBit™ Flash Family
No
Yes
P r e l i m i n a r y
Write Buffer Load Command:
Load Word Count to Program
to return to read array mode.
FAIL. Issue reset command
Program Data to Address:
Sector Address to Cause
Address 555h, Data 25h
Address 555h, Data AAh
Address 2AAh, Data 55h
Write Unlock Cycles:
Write to a Different
Write Buffer Abort
Abort Desired?
Write Buffer
Write Buffer
SA = wc
wc = 0?
Abort?
Issue
No
No
Yes
Yes
Unlock Cycle 1
Unlock Cycle 2
wc = number of words – 1
No
Perform Polling Algorithm
S29PL-N_00_A4 November 23, 2005
(see Write Operation Status
Confirm command:
SEA
PASS. Device is in
Polling Status
) may or may not
SA 29h
flowchart)
read mode.
Wait 4 µs
= Done?
Yes
SEA
Error?
Table
No
occurs. Dur-
12.1, and
SEA
Yes
.

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